photo transistors kodenshi korea corp the st-1mlar2 and 1mlbr2 is a high sensitivity dimensions [unit : mm] npn silicon phototransistor mounted in a to-18 type header with black epoxy encapsulation. with daylight filter the phototransistor is sensitive only to infrared rays. features ? wide angular response ? relatively low-cost against metal can package ? low profile package ? with daylight filter applications ? remote control sensors ? card readers ? optical switches absolute maximum ratings [t a = 25 ] c-e voltage e-c voltage collector current collector power dissipation operating temp storage temp soldering temp *1 *1. for max.5 seconds at the position of 2mm from the package electro-optical characteristics [t a = 25 ] spectral sensitivity peak wavelength half angle *2. color temp = 2856k standard tungsten lamp i ceo v ceo =10v - 720 ~ 1,050 collector dark current light current c-e saturation voltage switching speeds rise time fall time 4 1 200 v ce (sat) tr i c =2ma, 2,000lx *2 na i l ma v ce =10v, 200lx *2 0.5 1.2 5.0 i c ma 30 parameter p c mw tsol 100 -25~+90 v eco v 70 - 10 - typ. max. topr. p v cc =10v, i c =5ma r l =100 ? nm 940 sec -- degrees ? - unit. symbol conditions min. 260 -30~+100 tstg. st-1mlar2. st-1mlbr2 v ceo v symbol unit 40 rating parameter nm tf - -8- v sec - 0.2 0.4 - 1 -
photo transistors kodenshi korea corp st-1mlar2. st-1mlbr2 - 2 -
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